BAR 90-02ELS E6327

BAR90-02ELS Single silicon RF PIN Diode Product description This Infineon RF PIN diode provides high-voltage handling capabilities and comes with low loss and low distortion levels. Its low forward resistance, low capacitance and low inductance simplify design and support designers in creating smaller and lighter end-solutions. Feature list • • • • • Very low capacitance C = 0.21 pF (typical) at voltage VR = 0 V and frequency f = 1 GHz Low forward resistance RF = 1.7 Ω (typical) at IF = 3 mA and frequency f = 100 MHz Balanced ON / OFF mode harmonic distortion TSSLP-2-3 package (0.62 mm x 0.32 mm x 0.31 mm) with a 0201 foot print Pb-free, RoHS compliant and halogen free Product validation Qualified for industrial applications according to the relevant tests of JEDEC47/20/22. Potential applications Optimized for low bias current RF and high-speed interface switches in: • Set-top boxes, digital media players • Laptop and desktop PCs Device information Table 1 Part information Product name / Ordering code Package Pin configuration Marking Pieces / Reel BAR90-02ELS / BAR9002ELSE6327XTSA1 TSSLP-2-3 Single, leadless J 15 k underscore Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions! Datasheet www.infineon.com Please read the Important Notice and Warnings at the end of this document v1.0 2018-06-30 BAR90-02ELS Single silicon RF PIN Diode Table of contents Table of contents Product description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Feature list . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Product validation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Potential applications . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Device information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Table of contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 1 Absolute maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .2 2 2.1 2.2 Electrical performance in test fixture . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 DC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 AC characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 3 Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 Package information TSSLP-2-3 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 References . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 1 Absolute maximum ratings Table 2 Absolute maximum ratings at TA = 25 °C, unless otherwise specified Parameter Symbol Values Min. Unit Note or test condition Max. Diode reverse voltage VR – 80 V Forward current IF – 100 mA Total power dissipation PTOT – 150 mW Junction temperature TJ – 150 °C Operating temperature TOP -55 125 Storage temperature TSTG -55 150 TS ≤ 136°C 1) Attention: Stresses above the maximum values listed here may cause permanent damage to the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. Exceeding only one of these values may cause irreversible damage to the component. 1 TS is the soldering point temperature. Datasheet 2 v1.0 2018-06-30 BAR90-02ELS Single silicon RF PIN Diode Electrical performance in test fixture 2 Electrical performance in test fixture 2.1 DC characteristics At TA = 25 °C, unless otherwise specified Table 3 DC characteristics Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Breakdown voltage VBR 80 – – V IR = 5 µA Reverse current IR – – 50 nA VR = 60 V Forward voltage VF 0.75 0.79 0.87 V IF = 3 mA 0.82 0.91 1 IF = 100 mA I-region width WI – 20 – μm Charge carrier lifetime Τrr – 750 – ns IF = 10 mA, IR = 6 mA, measured at IR = 3 mA, RL = 100 Ω 10 2 10 1 IF [mA] 10 0 10 -1 10 -2 10 -3 0.2 0.4 0.6 0.8 1 1.2 VF [V] Figure 1 Datasheet Forward current IF vs. forward voltage VF 3 v1.0 2018-06-30 BAR90-02ELS Single silicon RF PIN Diode Electrical performance in test fixture 2.2 AC characteristics At TA = 25 °C, unless otherwise specified Table 4 Key parameter Parameter Symbol Capacitance C Forward resistance RF Inductance Table 5 Ls Values Unit Note or test condition pF VR = 0 V, f = 1 MHz Min. Typ. Max. – 0.35 – – 0.25 0.35 – 2.4 – – 1.7 2.3 IF = 3 mA, f = 100 MHz – 1.2 – IF = 10 mA, f = 100 MHz – 0.2 – VR = 1 V, f = 1 MHz Ω IF = 1 mA, f = 100 MHz nH AC parameter at frequency f = 1 GHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Capacitance C – 0.21 – pF VR = 0 V Reverse parallel resistance RP – 2.2 – kΩ VR = 0 V Forward resistance RF – 2.6 – Ω IF = 1 mA – 1.9 – IF = 3 mA – 1.5 – IF = 10 mA – 0.18 – – 0.12 – IF = 3 mA – 0.09 – IF = 10 mA – 18.4 – VR = 0 V Insertion loss IL Isolation Table 6 ISO dB IF = 1 mA AC parameter at frequency f = 1.8 GHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Capacitance C – 0.2 – pF VR = 0 V Reverse parallel resistance RP – 1.7 – kΩ VR = 0 V Forward resistance RF – 2.7 – Ω IF = 1 mA – 2 – IF = 3 mA – 1.6 – IF = 10 mA – 0.19 – – 0.13 – IF = 3 mA – 0.1 – IF = 10 mA – 14.8 – VR = 0 V Insertion loss Isolation Datasheet IL ISO 4 dB IF = 1 mA v1.0 2018-06-30 BAR90-02ELS Single silicon RF PIN Diode Electrical performance in test fixture Table 7 AC parameter at frequency f = 2.5 GHz Parameter Symbol Values Min. Typ. Max. Unit Note or test condition Capacitance C – 0.19 – pF VR = 0 V Reverse parallel resistance RP – 1.5 – kΩ VR = 0 V Forward resistance RF – 2.9 – Ω IF = 1 mA – 2.2 – IF = 3 mA – 1.8 – IF = 10 mA – 0.2 – – 0.14 – IF = 3 mA – 0.11 – IF = 10 mA – 12.6 – VR = 0 V Insertion loss IL Isolation Table 8 ISO dB IF = 1 mA AC parameter at frequency f = 5.5 GHz Parameter Symbol Insertion loss IL Isolation ISO Values Unit Note or test condition dB IF = 1 mA Min. Typ. Max. – 0.23 – – 0.18 – IF = 3 mA – 0.14 – IF = 10 mA – 7 – VR = 0 V 0.4 0.35 C [pF] 0.3 1 MHz 1 GHz 1.8 GHz 2.5 GHz 0.25 0.2 0.15 0.1 0 5 10 15 20 25 30 35 40 V R [V] Figure 2 Datasheet Capacitance C vs. reverse voltage VR at different frequencies 5 v1.0 2018-06-30 BAR90-02ELS Single silicon RF PIN Diode Electrical performance in test fixture Figure 3 Reverse parallel resistance RP vs. reverse voltage VR at different frequencies Figure 4 Forward resistance RF vs. forward current IF at different frequencies Datasheet 6 v1.0 2018-06-30 BAR90-02ELS Single silicon RF PIN Diode Electrical performance in test fixture 0 -0.1 I L [dB] -0.2 -0.3 0.5 mA 1 mA 3 mA 10 mA 100 mA -0.4 -0.5 0 1 2 3 4 5 6 5 6 f [GHz] Figure 5 Insertion loss IL vs. frequency f at different currents 0 I SO [dB] -5 -10 -15 0V 1V 10 V -20 -25 0 1 2 3 4 f [GHz] Figure 6 Note: Datasheet Isolation ISO vs. frequency f at different reverse voltages The curves shown in this chapter have been generated using typical devices but shall not be understood as a guarantee that all devices have identical characteristic curves. 7 v1.0 2018-06-30 BAR90-02ELS Single silicon RF PIN Diode Thermal characteristics 3 Thermal characteristics Table 9 Thermal resistance Parameter Sym bol Thermal resistance (junction - soldering point) RthJS Values Min. Typ. Max. – 90 – Unit Note or test condition K/W TS = 136 °C 1) 120 100 I F [mA] 80 60 40 20 0 0 20 40 60 80 100 120 140 160 T S [°C] Figure 7 1 Permissible forward current ratio IFmax/IDC in DC operation For RthJS in other conditions refer to the curves in this chapter. Datasheet 8 v1.0 2018-06-30 BAR90-02ELS Single silicon RF PIN Diode Thermal characteristics Figure 8 Thermal resistance RthJS in pulse operation Figure 9 Permissible forward current IF in pulse operation Datasheet 9 v1.0 2018-06-30 BAR90-02ELS Single silicon RF PIN Diode Package information TSSLP-2-3 4 Package information TSSLP-2-3 Figure 10 Package outline Figure 11 Foot print Figure 12 Marking layout example 4 0.35 2 0.73 8 PIN 1 INDEX MARKING 0.43 ALL DIMENSIONS ARE IN UNITS MM THE DRAWING IS IN COMPLIANCE WITH ISO 128 & PROJECTION METHOD 1 [ Figure 13 Note: Datasheet ] Tape dimensions See our Recommendations for Printed Circuit Board Assembly of TSLP/TSSLP/TSNP Packages . The marking layout is an example. For the real marking code refer to the device information on the first page. The number of characters shown in the layout example is not necessarily the real one. The marking layout can consist of less characters. 10 v1.0 2018-06-30 BAR90-02ELS Single silicon RF PIN Diode References 5 [1] References Infineon AG - Recommendations for Printed Circuit Board Assembly of Infineon TSLP/TSSLP/TSNP Packages Revision history Document version Date of release Description of changes 1.0 2018-09-07 • • • • • Datasheet Change from series datasheet to individual one Initial release of datasheet Typical values and curves updated to the values of the production (No product or process change behind) Minimum/typical values added Typical curves/values removed 11 v1.0 2018-06-30 Trademarks All referenced product or service names and trademarks are the property of their respective owners. Edition 2018-06-30 Published by Infineon Technologies AG 81726 Munich, Germany © 2018 Infineon Technologies AG All Rights Reserved. Do you have a question about any aspect of this document? Email: erratum@infineon.com Document reference IFX-boy1530187784205 IMPORTANT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”) . With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer’s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer’s products and any use of the product of Infineon Technologies in customer’s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer’s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. WARNINGS Due to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. 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